SSM6N35AFE,LF
SSM6N35AFE,LF
Modèle de produit:
SSM6N35AFE,LF
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET 2 N-CHANNEL 20V 250MA ES6
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
59855 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SSM6N35AFE,LF.pdf

introduction

We can supply SSM6N35AFE,LF, use the request quote form to request SSM6N35AFE,LF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM6N35AFE,LF.The price and lead time for SSM6N35AFE,LF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM6N35AFE,LF.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1V @ 100µA
Package composant fournisseur:ES6
Séries:-
Rds On (Max) @ Id, Vgs:1.1 Ohm @ 150mA, 4.5V
Puissance - Max:250mW
Emballage:Tape & Reel (TR)
Package / Boîte:SOT-563, SOT-666
Autres noms:SSM6N35AFE,LF(B
SSM6N35AFELF
SSM6N35AFELF(B
SSM6N35AFELF-ND
SSM6N35AFELFTR
Température de fonctionnement:150°C
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:36pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:0.34nC @ 4.5V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate, 1.2V Drive
Tension drain-source (Vdss):20V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 20V 250mA (Ta) 250mW Surface Mount ES6
Courant - Drainage continu (Id) à 25 ° C:250mA (Ta)
Email:[email protected]

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