SSM6N37FE,LM(T
SSM6N37FE,LM(T
Artikelnummer:
SSM6N37FE,LM(T
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET 2N-CH 20V 0.25A 2-2N1D
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
50940 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SSM6N37FE,LM(T.pdf

Einführung

We can supply SSM6N37FE,LM(T, use the request quote form to request SSM6N37FE,LM(T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SSM6N37FE,LM(T.The price and lead time for SSM6N37FE,LM(T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SSM6N37FE,LM(T.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 1mA
Supplier Device-Gehäuse:ES6
Serie:-
Rds On (Max) @ Id, Vgs:2.2 Ohm @ 100mA, 4.5V
Leistung - max:150mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-563, SOT-666
Andere Namen:SSM6N37FE,LM
SSM6N37FE,LM(B
SSM6N37FELM
SSM6N37FELM(TTR
SSM6N37FELMTR
SSM6N37FELMTR-ND
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:12pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 250mA 150mW Surface Mount ES6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:250mA
Email:[email protected]

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