Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | 860pF @ 10V |
Tegangan - Breakdown: | 6-TSOP |
Vgs (th) (Max) @ Id: | 27 mOhm @ 5.1A, 4.5V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | TrenchFET® |
Status RoHS: | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs: | 8A (Tc) |
Polarisasi: | SOT-23-6 Thin, TSOT-23-6 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 15 Weeks |
Nomor Bagian Produsen: | SI3460BDV-T1-GE3 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 24nC @ 8V |
Gate Charge (Qg) (Max) @ Vgs: | 1V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET N-CH 20V 8A 6-TSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 20V |
kapasitansi Ratio: | 2W (Ta), 3.5W (Tc) |
Email: | [email protected] |