Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
Paket Perangkat pemasok: | ISOPLUS i4-PAC™ |
Seri: | GigaMOS™, HiPerFET™, TrenchT2™ |
Rds Pada (Max) @ Id, Vgs: | 20 mOhm @ 55A, 10V |
Listrik - Max: | 180W |
Pengemasan: | Tube |
Paket / Case: | i4-Pac™-5 |
Suhu Operasional: | -55°C ~ 175°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 8600pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
FET Jenis: | 2 N-Channel (Dual) |
Fitur FET: | Standard |
Tiriskan untuk Sumber Tegangan (Vdss): | 150V |
Detil Deskripsi: | Mosfet Array 2 N-Channel (Dual) 150V 53A 180W Through Hole ISOPLUS i4-PAC™ |
Current - Continuous Drain (Id) @ 25 ° C: | 53A |
Nomor Bagian Dasar: | FMM |
Email: | [email protected] |