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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > TK560A65Y,S4X
TK560A65Y,S4X
TK560A65Y,S4X
Modèle de produit:
TK560A65Y,S4X
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CH 650V 7A TO220SIS
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
66080 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TK560A65Y,S4X.pdf
Enquête

introduction

We can supply TK560A65Y,S4X, use the request quote form to request TK560A65Y,S4X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK560A65Y,S4X.The price and lead time for TK560A65Y,S4X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK560A65Y,S4X.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 240µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220SIS
Séries:DTMOSV
Rds On (Max) @ Id, Vgs:560 mOhm @ 3.5A, 10V
Dissipation de puissance (max):30W
Emballage:Tube
Package / Boîte:TO-220-3 Full Pack
Autres noms:TK560A65Y,S4X(S
TK560A65YS4X
TK560A65YS4X(S
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:380pF @ 300V
Charge de la porte (Qg) (Max) @ Vgs:14.5nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):650V
Description détaillée:N-Channel 650V 7A (Tc) 30W Through Hole TO-220SIS
Courant - Drainage continu (Id) à 25 ° C:7A (Tc)
Email:[email protected]

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