TK560P65Y,RQ
TK560P65Y,RQ
Modèle de produit:
TK560P65Y,RQ
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CHANNEL 650V 7A DPAK
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
8479 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TK560P65Y,RQ.pdf

introduction

We can supply TK560P65Y,RQ, use the request quote form to request TK560P65Y,RQ pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK560P65Y,RQ.The price and lead time for TK560P65Y,RQ depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK560P65Y,RQ.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 240µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:DPAK
Séries:DTMOSV
Rds On (Max) @ Id, Vgs:560 mOhm @ 3.5A, 10V
Dissipation de puissance (max):60W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:TO-252-3, DPak (2 Leads + Tab), SC-63
Autres noms:TK560P65Y,RQ(S
TK560P65YRQ(S
TK560P65YRQTR
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:380pF @ 300V
Charge de la porte (Qg) (Max) @ Vgs:14.5nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):650V
Description détaillée:N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK
Courant - Drainage continu (Id) à 25 ° C:7A (Tc)
Email:[email protected]

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