Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 4V @ 240µA |
Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220SIS |
Serie: | DTMOSV |
Rds On (Max) @ Id, Vgs: | 560 mOhm @ 3.5A, 10V |
Power Dissipation (Max): | 30W |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack |
Andre navne: | TK560A65Y,S4X(S TK560A65YS4X TK560A65YS4X(S |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 380pF @ 300V |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 650V |
Detaljeret beskrivelse: | N-Channel 650V 7A (Tc) 30W Through Hole TO-220SIS |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7A (Tc) |
Email: | [email protected] |