TK22E10N1,S1X
TK22E10N1,S1X
Modèle de produit:
TK22E10N1,S1X
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N CH 100V 52A TO220
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
32458 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TK22E10N1,S1X.pdf

introduction

We can supply TK22E10N1,S1X, use the request quote form to request TK22E10N1,S1X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK22E10N1,S1X.The price and lead time for TK22E10N1,S1X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK22E10N1,S1X.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 300µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220
Séries:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:13.8 mOhm @ 11A, 10V
Dissipation de puissance (max):72W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Autres noms:TK22E10N1,S1X(S
TK22E10N1S1X
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1800pF @ 50V
Charge de la porte (Qg) (Max) @ Vgs:28nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):100V
Description détaillée:N-Channel 100V 52A (Tc) 72W (Tc) Through Hole TO-220
Courant - Drainage continu (Id) à 25 ° C:52A (Tc)
Email:[email protected]

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