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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > TK25E06K3,S1X(S
TK25E06K3,S1X(S
Modèle de produit:
TK25E06K3,S1X(S
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CH 60V 25A TO-220AB
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
14488 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TK25E06K3,S1X(S.pdf
Enquête

introduction

We can supply TK25E06K3,S1X(S, use the request quote form to request TK25E06K3,S1X(S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK25E06K3,S1X(S.The price and lead time for TK25E06K3,S1X(S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK25E06K3,S1X(S.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:-
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220-3
Séries:U-MOSIV
Rds On (Max) @ Id, Vgs:18 mOhm @ 12.5A, 10V
Dissipation de puissance (max):60W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Autres noms:TK25E06K3S1X(S
TK25E06K3S1XS
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Charge de la porte (Qg) (Max) @ Vgs:29nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension drain-source (Vdss):60V
Description détaillée:N-Channel 60V 25A (Ta) 60W (Tc) Through Hole TO-220-3
Courant - Drainage continu (Id) à 25 ° C:25A (Ta)
Email:[email protected]

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