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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > TK22E10N1,S1X
TK22E10N1,S1X
TK22E10N1,S1X
Part Number:
TK22E10N1,S1X
Výrobce:
Toshiba Semiconductor and Storage
Popis:
MOSFET N CH 100V 52A TO220
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
32458 Pieces
Čas doručení:
1-2 days
Datový list:
TK22E10N1,S1X.pdf
Dotaz

Úvod

We can supply TK22E10N1,S1X, use the request quote form to request TK22E10N1,S1X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK22E10N1,S1X.The price and lead time for TK22E10N1,S1X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK22E10N1,S1X.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4V @ 300µA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-220
Série:U-MOSVIII-H
RDS On (Max) @ Id, Vgs:13.8 mOhm @ 11A, 10V
Ztráta energie (Max):72W (Tc)
Obal:Tube
Paket / krabice:TO-220-3
Ostatní jména:TK22E10N1,S1X(S
TK22E10N1S1X
Provozní teplota:150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:1800pF @ 50V
Nabíjení brány (Qg) (Max) @ Vgs:28nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):100V
Detailní popis:N-Channel 100V 52A (Tc) 72W (Tc) Through Hole TO-220
Proud - kontinuální odtok (Id) @ 25 ° C:52A (Tc)
Email:[email protected]

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