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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > APT12M80B
APT12M80B
APT12M80B
Modèle de produit:
APT12M80B
Fabricant:
Microsemi
La description:
MOSFET N-CH 800V 13A TO-247
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
42800 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.APT12M80B.pdf2.APT12M80B.pdf
Enquête

introduction

We can supply APT12M80B, use the request quote form to request APT12M80B pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT12M80B.The price and lead time for APT12M80B depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT12M80B.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-247 [B]
Séries:POWER MOS 8™
Rds On (Max) @ Id, Vgs:800 mOhm @ 6A, 10V
Dissipation de puissance (max):335W (Tc)
Emballage:Tube
Package / Boîte:TO-247-3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2470pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:80nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):800V
Description détaillée:N-Channel 800V 13A (Tc) 335W (Tc) Through Hole TO-247 [B]
Courant - Drainage continu (Id) à 25 ° C:13A (Tc)
Email:[email protected]

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