APT12M80B
APT12M80B
Artikelnummer:
APT12M80B
Hersteller:
Microsemi
Beschreibung:
MOSFET N-CH 800V 13A TO-247
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
42800 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APT12M80B.pdf2.APT12M80B.pdf

Einführung

We can supply APT12M80B, use the request quote form to request APT12M80B pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT12M80B.The price and lead time for APT12M80B depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT12M80B.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247 [B]
Serie:POWER MOS 8™
Rds On (Max) @ Id, Vgs:800 mOhm @ 6A, 10V
Verlustleistung (max):335W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 13A (Tc) 335W (Tc) Through Hole TO-247 [B]
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:13A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung