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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > APT12F60K
APT12F60K
Modèle de produit:
APT12F60K
Fabricant:
Microsemi
La description:
MOSFET N-CH 600V 12A TO-220
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
16824 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.APT12F60K.pdf2.APT12F60K.pdf
Enquête

introduction

We can supply APT12F60K, use the request quote form to request APT12F60K pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT12F60K.The price and lead time for APT12F60K depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT12F60K.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 500µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220 [K]
Séries:-
Rds On (Max) @ Id, Vgs:620 mOhm @ 6A, 10V
Dissipation de puissance (max):225W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3
Autres noms:APT12F60KMI
APT12F60KMI-ND
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2200pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:55nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):600V
Description détaillée:N-Channel 600V 12A (Tc) 225W (Tc) Through Hole TO-220 [K]
Courant - Drainage continu (Id) à 25 ° C:12A (Tc)
Email:[email protected]

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