ALD212908APAL
ALD212908APAL
Modèle de produit:
ALD212908APAL
Fabricant:
Advanced Linear Devices, Inc.
La description:
MOSFET 2N-CH 10.6V 0.08A 8DIP
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
66541 Pieces
Heure de livraison:
1-2 days
Fiche technique:
ALD212908APAL.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:20mV @ 10µA
Package composant fournisseur:8-PDIP
Séries:EPAD®, Zero Threshold™
Rds On (Max) @ Id, Vgs:-
Puissance - Max:500mW
Emballage:Tube
Package / Boîte:8-DIP (0.300", 7.62mm)
Température de fonctionnement:0°C ~ 70°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:8 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:-
Charge de la porte (Qg) (Max) @ Vgs:-
type de FET:2 N-Channel (Dual) Matched Pair
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):10.6V
Description détaillée:Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Courant - Drainage continu (Id) à 25 ° C:80mA
Email:[email protected]

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