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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - tableaux > ALD212900APAL
ALD212900APAL
Modèle de produit:
ALD212900APAL
Fabricant:
Advanced Linear Devices, Inc.
La description:
MOSFET 2N-CH 10.6V 0.08A 8DIP
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
5823 Pieces
Heure de livraison:
1-2 days
Fiche technique:
ALD212900APAL.pdf
Enquête

introduction

We can supply ALD212900APAL, use the request quote form to request ALD212900APAL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ALD212900APAL.The price and lead time for ALD212900APAL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ALD212900APAL.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:10mV @ 20µA
Package composant fournisseur:8-PDIP
Séries:EPAD®, Zero Threshold™
Rds On (Max) @ Id, Vgs:14 Ohm
Puissance - Max:500mW
Emballage:Tube
Package / Boîte:8-DIP (0.300", 7.62mm)
Autres noms:1014-1215
Température de fonctionnement:0°C ~ 70°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:8 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:30pF @ 5V
Charge de la porte (Qg) (Max) @ Vgs:-
type de FET:2 N-Channel (Dual) Matched Pair
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):10.6V
Description détaillée:Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Courant - Drainage continu (Id) à 25 ° C:80mA
Email:[email protected]

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