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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Arrays > ALD212908APAL
ALD212908APAL
ALD212908APAL
Artikelnummer:
ALD212908APAL
Hersteller:
Advanced Linear Devices, Inc.
Beschreibung:
MOSFET 2N-CH 10.6V 0.08A 8DIP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
66541 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ALD212908APAL.pdf
Anfrage

Einführung

We can supply ALD212908APAL, use the request quote form to request ALD212908APAL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ALD212908APAL.The price and lead time for ALD212908APAL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ALD212908APAL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:20mV @ 10µA
Supplier Device-Gehäuse:8-PDIP
Serie:EPAD®, Zero Threshold™
Rds On (Max) @ Id, Vgs:-
Leistung - max:500mW
Verpackung:Tube
Verpackung / Gehäuse:8-DIP (0.300", 7.62mm)
Betriebstemperatur:0°C ~ 70°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:8 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Dual) Matched Pair
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):10.6V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:80mA
Email:[email protected]

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