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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Arrays > ALD212900PAL
ALD212900PAL
Artikelnummer:
ALD212900PAL
Hersteller:
Advanced Linear Devices, Inc.
Beschreibung:
MOSFET 2N-CH 10.6V 0.08A 8DIP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
59310 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ALD212900PAL.pdf
Anfrage

Einführung

We can supply ALD212900PAL, use the request quote form to request ALD212900PAL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ALD212900PAL.The price and lead time for ALD212900PAL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ALD212900PAL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:20mV @ 20µA
Supplier Device-Gehäuse:8-PDIP
Serie:EPAD®, Zero Threshold™
Rds On (Max) @ Id, Vgs:14 Ohm
Leistung - max:500mW
Verpackung:Tube
Verpackung / Gehäuse:8-DIP (0.300", 7.62mm)
Andere Namen:1014-1212
Betriebstemperatur:0°C ~ 70°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:8 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:30pF @ 5V
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Dual) Matched Pair
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):10.6V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:80mA
Email:[email protected]

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In Verbindung stehende Teile für ALD212900PAL

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ALD212902SAL Advanced Linear Devices, Inc. MOSFET 2N-CH 10.6V 0.08A 8SOIC Anfrage
ALD210808ASCL Advanced Linear Devices, Inc. MOSFET 4N-CH 10.6V 0.08A 16SOIC Anfrage
ALD212900ASAL Advanced Linear Devices, Inc. MOSFET 2N-CH 10.6V 0.08A 8SOIC Anfrage
ALD210814SCL Advanced Linear Devices, Inc. MOSFET 4N-CH 10.6V 0.08A 16SOIC Anfrage
ALD210814PCL Image ALD210814PCL Advanced Linear Devices, Inc. MOSFET 4N-CH 10.6V 0.08A 16DIP Anfrage
ALD212908APAL Image ALD212908APAL Advanced Linear Devices, Inc. MOSFET 2N-CH 10.6V 0.08A 8DIP Anfrage
ALD212904PAL Image ALD212904PAL Advanced Linear Devices, Inc. MOSFET 2N-CH 10.6V 0.08A 8DIP Anfrage

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