2SC6042,T2HOSH1Q(J
Modèle de produit:
2SC6042,T2HOSH1Q(J
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS NPN 1A 375V SC71
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
73793 Pieces
Heure de livraison:
1-2 days
Fiche technique:
2SC6042,T2HOSH1Q(J.pdf

introduction

We can supply 2SC6042,T2HOSH1Q(J, use the request quote form to request 2SC6042,T2HOSH1Q(J pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SC6042,T2HOSH1Q(J.The price and lead time for 2SC6042,T2HOSH1Q(J depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SC6042,T2HOSH1Q(J.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):375V
Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 800mA
Transistor Type:NPN
Package composant fournisseur:MSTM
Séries:-
Puissance - Max:1W
Emballage:Bulk
Package / Boîte:SC-71
Autres noms:2SC6042T2HOSH1Q(J
2SC6042T2HOSH1QJ
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:-
Description détaillée:Bipolar (BJT) Transistor NPN 375V 1A 1W Through Hole MSTM
Gain en courant DC (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
Courant - Collecteur Cutoff (Max):100µA (ICBO)
Courant - Collecteur (Ic) (max):1A
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes