2SC6026MFVGR,L3F
2SC6026MFVGR,L3F
Modèle de produit:
2SC6026MFVGR,L3F
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS NPN 50V 0.15A VESM
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
50976 Pieces
Heure de livraison:
1-2 days
Fiche technique:
2SC6026MFVGR,L3F.pdf

introduction

We can supply 2SC6026MFVGR,L3F, use the request quote form to request 2SC6026MFVGR,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SC6026MFVGR,L3F.The price and lead time for 2SC6026MFVGR,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SC6026MFVGR,L3F.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor Type:NPN
Package composant fournisseur:VESM
Séries:-
Puissance - Max:150mW
Emballage:Cut Tape (CT)
Package / Boîte:SOT-723
Autres noms:2SC6026MFVGRL3FCT
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:16 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:60MHz
Description détaillée:Bipolar (BJT) Transistor NPN 50V 150mA 60MHz 150mW Surface Mount VESM
Gain en courant DC (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Courant - Collecteur Cutoff (Max):100nA (ICBO)
Courant - Collecteur (Ic) (max):150mA
Email:[email protected]

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