SISH129DN-T1-GE3
SISH129DN-T1-GE3
Varenummer:
SISH129DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CHAN 30V POWERPAK 1212-
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
26907 Pieces
Leveringstid:
1-2 days
Datablad:
SISH129DN-T1-GE3.pdf

Introduktion

We can supply SISH129DN-T1-GE3, use the request quote form to request SISH129DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SISH129DN-T1-GE3.The price and lead time for SISH129DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SISH129DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2.8V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® 1212-8SH
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:11.4 mOhm @ 14.4A, 10V
Power Dissipation (Max):3.8W (Ta), 52.1W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® 1212-8SH
Andre navne:SISH129DN-T1-GE3TR
Driftstemperatur:-50°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:27 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:3345pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:71nC @ 10V
FET Type:P-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):4.5V, 10V
Afløb til Source Voltage (VDSS):30V
Detaljeret beskrivelse:P-Channel 30V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:14.4A (Ta), 35A (Tc)
Email:[email protected]

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