Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 1.5V @ 250µA |
Vgs (Max): | ±12V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PowerPAK® 1212-8SH |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 19.5A, 4.5V |
Power Dissipation (Max): | 1.5W (Ta) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | PowerPAK® 1212-8SH |
Andre navne: | SISH106DN-T1-GE3TR |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 42 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 2.5V, 4.5V |
Afløb til Source Voltage (VDSS): | 20V |
Detaljeret beskrivelse: | N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12.5A (Ta) |
Email: | [email protected] |