SISH106DN-T1-GE3
Nomor bagian:
SISH106DN-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CHAN PPAK 1212-8SH
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
9088 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SISH106DN-T1-GE3.pdf

pengantar

We can supply SISH106DN-T1-GE3, use the request quote form to request SISH106DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SISH106DN-T1-GE3.The price and lead time for SISH106DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SISH106DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® 1212-8SH
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:6.2 mOhm @ 19.5A, 4.5V
Power Disipasi (Max):1.5W (Ta)
Pengemasan:Tape & Reel (TR)
Paket / Case:PowerPAK® 1212-8SH
Nama lain:SISH106DN-T1-GE3TR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:42 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:27nC @ 4.5V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):2.5V, 4.5V
Tiriskan untuk Sumber Tegangan (Vdss):20V
Detil Deskripsi:N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
Current - Continuous Drain (Id) @ 25 ° C:12.5A (Ta)
Email:[email protected]

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