SISH129DN-T1-GE3
SISH129DN-T1-GE3
Nomor bagian:
SISH129DN-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET P-CHAN 30V POWERPAK 1212-
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
26907 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SISH129DN-T1-GE3.pdf

pengantar

We can supply SISH129DN-T1-GE3, use the request quote form to request SISH129DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SISH129DN-T1-GE3.The price and lead time for SISH129DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SISH129DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2.8V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® 1212-8SH
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:11.4 mOhm @ 14.4A, 10V
Power Disipasi (Max):3.8W (Ta), 52.1W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:PowerPAK® 1212-8SH
Nama lain:SISH129DN-T1-GE3TR
Suhu Operasional:-50°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:27 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:3345pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:71nC @ 10V
FET Jenis:P-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:P-Channel 30V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
Current - Continuous Drain (Id) @ 25 ° C:14.4A (Ta), 35A (Tc)
Email:[email protected]

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