SIA850DJ-T1-GE3
SIA850DJ-T1-GE3
Varenummer:
SIA850DJ-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 190V 0.95A SC70-6
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
14976 Pieces
Leveringstid:
1-2 days
Datablad:
SIA850DJ-T1-GE3.pdf

Introduktion

We can supply SIA850DJ-T1-GE3, use the request quote form to request SIA850DJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA850DJ-T1-GE3.The price and lead time for SIA850DJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA850DJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1.4V @ 250µA
Vgs (Max):±16V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® SC-70-6 Dual
Serie:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:3.8 Ohm @ 360mA, 4.5V
Power Dissipation (Max):1.9W (Ta), 7W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® SC-70-6 Dual
Andre navne:SIA850DJ-T1-GE3-ND
SIA850DJ-T1-GE3TR
SIA850DJT1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V
FET Type:N-Channel
FET-funktion:Schottky Diode (Isolated)
Drevspænding (Maks. RDS On, Min Rds On):1.8V, 4.5V
Afløb til Source Voltage (VDSS):190V
Detaljeret beskrivelse:N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:950mA (Tc)
Email:[email protected]

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