SIA850DJ-T1-GE3
SIA850DJ-T1-GE3
Nomor bagian:
SIA850DJ-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 190V 0.95A SC70-6
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
14976 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIA850DJ-T1-GE3.pdf

pengantar

We can supply SIA850DJ-T1-GE3, use the request quote form to request SIA850DJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA850DJ-T1-GE3.The price and lead time for SIA850DJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA850DJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:1.4V @ 250µA
Vgs (Max):±16V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® SC-70-6 Dual
Seri:LITTLE FOOT®
Rds Pada (Max) @ Id, Vgs:3.8 Ohm @ 360mA, 4.5V
Power Disipasi (Max):1.9W (Ta), 7W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:PowerPAK® SC-70-6 Dual
Nama lain:SIA850DJ-T1-GE3-ND
SIA850DJ-T1-GE3TR
SIA850DJT1GE3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V
FET Jenis:N-Channel
Fitur FET:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min RDS Aktif):1.8V, 4.5V
Tiriskan untuk Sumber Tegangan (Vdss):190V
Detil Deskripsi:N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
Current - Continuous Drain (Id) @ 25 ° C:950mA (Tc)
Email:[email protected]

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