SI5519DU-T1-GE3
- Varenummer:
- SI5519DU-T1-GE3
- Fabrikant:
- Electro-Films (EFI) / Vishay
- Beskrivelse:
- MOSFET N/P-CH 20V 6A CHIPFET
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18488 Pieces
- Leveringstid:
- 1-2 days
- Datablad:
- SI5519DU-T1-GE3.pdf
Introduktion
We can supply SI5519DU-T1-GE3, use the request quote form to request SI5519DU-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5519DU-T1-GE3.The price and lead time for SI5519DU-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5519DU-T1-GE3.We look forward to working with you to establish long-term relations of cooperation
specifikationer
| Tilstand | New & Unused, Original Packing |
|---|---|
| Oprindelse | Contact us |
| Vgs (th) (Max) @ Id: | 1.8V @ 250µA |
| Leverandør Device Package: | PowerPAK® ChipFet Dual |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 36 mOhm @ 6.1A, 4.5V |
| Strøm - Max: | 10.4W |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | PowerPAK® ChipFET™ Dual |
| Andre navne: | SI5519DU-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 660pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 17.5nC @ 10V |
| FET Type: | N and P-Channel |
| FET-funktion: | Standard |
| Afløb til Source Voltage (VDSS): | 20V |
| Detaljeret beskrivelse: | Mosfet Array N and P-Channel 20V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A |
| Basenummer: | SI5519 |
| Email: | [email protected] |
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