SI5858DU-T1-E3
SI5858DU-T1-E3
Varenummer:
SI5858DU-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 20V 6A PPAK CHIPFET
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
61463 Pieces
Leveringstid:
1-2 days
Datablad:
SI5858DU-T1-E3.pdf

Introduktion

We can supply SI5858DU-T1-E3, use the request quote form to request SI5858DU-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5858DU-T1-E3.The price and lead time for SI5858DU-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5858DU-T1-E3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® ChipFet Dual
Serie:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:39 mOhm @ 4.4A, 4.5V
Power Dissipation (Max):2.3W (Ta), 8.3W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® ChipFET™ Dual
Andre navne:SI5858DU-T1-E3TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 8V
FET Type:N-Channel
FET-funktion:Schottky Diode (Isolated)
Drevspænding (Maks. RDS On, Min Rds On):1.8V, 4.5V
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:N-Channel 20V 6A (Tc) 2.3W (Ta), 8.3W (Tc) Surface Mount PowerPAK® ChipFet Dual
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

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