Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.5V @ 4mA, 2.5V @ 16mA |
Leverandør Device Package: | Die |
Serie: | eGaN® |
Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
Strøm - Max: | - |
Emballage: | Tray |
Pakke / tilfælde: | Die |
Andre navne: | 917-EPC2100ENG EPC2100ENGR_H1 EPC2100ENGRH1 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 475pF @ 15V, 1960pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 4.9nC @ 15V, 19nC @ 15V |
FET Type: | 2 N-Channel (Half Bridge) |
FET-funktion: | GaNFET (Gallium Nitride) |
Afløb til Source Voltage (VDSS): | 30V |
Detaljeret beskrivelse: | Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10A (Ta), 40A (Ta) |
Email: | [email protected] |