Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | +6V, -4V |
Teknologi: | GaNFET (Gallium Nitride) |
Leverandør Device Package: | Die |
Serie: | eGaN® |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 1.5A, 5V |
Power Dissipation (Max): | - |
Emballage: | Cut Tape (CT) |
Pakke / tilfælde: | Die |
Andre navne: | 917-1139-1 917-1139-1-ND 917-EPC2040ENGRCT |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 100pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs: | 0.93nC @ 5V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 5V |
Afløb til Source Voltage (VDSS): | 15V |
Detaljeret beskrivelse: | N-Channel 15V 3.4A (Ta) Surface Mount Die |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.4A (Ta) |
Email: | [email protected] |