ZXMC3F31DN8TA
ZXMC3F31DN8TA
Artikelnummer:
ZXMC3F31DN8TA
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
46169 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ZXMC3F31DN8TA.pdf

Einführung

We can supply ZXMC3F31DN8TA, use the request quote form to request ZXMC3F31DN8TA pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number ZXMC3F31DN8TA.The price and lead time for ZXMC3F31DN8TA depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# ZXMC3F31DN8TA.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:-
Rds On (Max) @ Id, Vgs:24 mOhm @ 7A, 10V
Leistung - max:1.8W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:ZXMC3F31DN8TADI
ZXMC3F31DN8TADI-ND
ZXMC3F31DN8TADITR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:608pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:12.9nC @ 10V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate, 4.5V Drive
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array N and P-Channel 30V 6.8A, 4.9A 1.8W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6.8A, 4.9A
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung