ZXMC3AM832TA
ZXMC3AM832TA
Artikelnummer:
ZXMC3AM832TA
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
77171 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ZXMC3AM832TA.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA (Min)
Supplier Device-Gehäuse:8-MLP (3x3)
Serie:-
Rds On (Max) @ Id, Vgs:120 mOhm @ 2.5A, 10V
Leistung - max:1.7W
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-VDFN Exposed Pad
Andere Namen:1034-ZXMC3AM832TACT
Betriebstemperatur:-
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:3.9nC @ 10V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array N and P-Channel 30V 2.9A, 2.1A 1.7W Surface Mount 8-MLP (3x3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.9A, 2.1A
Email:[email protected]

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