TPC8062-H,LQ(CM
Artikelnummer:
TPC8062-H,LQ(CM
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 30V 18A 8SOP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
43345 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.TPC8062-H,LQ(CM.pdf2.TPC8062-H,LQ(CM.pdf

Einführung

We can supply TPC8062-H,LQ(CM, use the request quote form to request TPC8062-H,LQ(CM pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPC8062-H,LQ(CM.The price and lead time for TPC8062-H,LQ(CM depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPC8062-H,LQ(CM.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.3V @ 300µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOP
Serie:U-MOSVII-H
Rds On (Max) @ Id, Vgs:5.8 mOhm @ 9A, 10V
Verlustleistung (max):1W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.173", 4.40mm Width)
Andere Namen:TPC8062-HLQ(CM
TPC8062HLQCM
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 18A (Ta) 1W (Ta) Surface Mount 8-SOP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:18A (Ta)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung