TPC8036-H(TE12L,QM
Artikelnummer:
TPC8036-H(TE12L,QM
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 30V 18A 8-SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
74522 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.TPC8036-H(TE12L,QM.pdf2.TPC8036-H(TE12L,QM.pdf

Einführung

We can supply TPC8036-H(TE12L,QM, use the request quote form to request TPC8036-H(TE12L,QM pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPC8036-H(TE12L,QM.The price and lead time for TPC8036-H(TE12L,QM depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPC8036-H(TE12L,QM.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.3V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOP (5.5x6.0)
Serie:U-MOSVI-H
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 9A, 10V
Verlustleistung (max):1W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.173", 4.40mm Width)
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:49nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 18A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:18A (Ta)
Email:[email protected]

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