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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > R6076ENZ1C9
R6076ENZ1C9
R6076ENZ1C9
Artikelnummer:
R6076ENZ1C9
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 600V 76A TO247
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
68869 Pieces
Lieferzeit:
1-2 days
Datenblatt:
R6076ENZ1C9.pdf
Anfrage

Einführung

We can supply R6076ENZ1C9, use the request quote form to request R6076ENZ1C9 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number R6076ENZ1C9.The price and lead time for R6076ENZ1C9 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# R6076ENZ1C9.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247
Serie:-
Rds On (Max) @ Id, Vgs:42 mOhm @ 44.4A, 10V
Verlustleistung (max):120W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:17 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:6500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 76A (Tc) 120W (Tc) Through Hole TO-247
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:76A (Tc)
Email:[email protected]

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