Deutsch
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Über uns | Kontakt | Angebot anfordern |
Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > R6035ENZC8
R6035ENZC8
R6035ENZC8
Artikelnummer:
R6035ENZC8
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 600V 35A TO3PF
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30700 Pieces
Lieferzeit:
1-2 days
Datenblatt:
R6035ENZC8.pdf
Anfrage

Einführung

We can supply R6035ENZC8, use the request quote form to request R6035ENZC8 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number R6035ENZC8.The price and lead time for R6035ENZC8 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# R6035ENZC8.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-3PF
Serie:-
Rds On (Max) @ Id, Vgs:102 mOhm @ 18.1A, 10V
Verlustleistung (max):120W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-3P-3 Full Pack
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:17 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2720pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 35A (Tc) 120W (Tc) Through Hole TO-3PF
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:35A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung

In Verbindung stehende Teile für R6035ENZC8

Image Artikelnummer Hersteller Beschreibung Aussicht
R6031035ESYA Powerex, Inc. DIODE GEN PURP 1KV 350A DO205 Anfrage
R6046FNZ1C9 Image R6046FNZ1C9 LAPIS Semiconductor MOSFET N-CH 600V 46A TO247 Anfrage
R6031025HSYA Powerex, Inc. DIODE GEN PURP 1KV 250A DO205 Anfrage
R6031235ESYA Powerex, Inc. DIODE GEN PURP 1.2KV 350A DO205 Anfrage
R60400-1STR Bussmann (Eaton) FUSE BLOK CART 600V 400A CHASSIS Anfrage
R6031225HSYA Powerex, Inc. DIODE GEN PURP 1.2KV 250A DO205 Anfrage
R6046ANZC8 Image R6046ANZC8 LAPIS Semiconductor MOSFET N-CH 10V DRIVE TO-3PF Anfrage
R6031222PSYA Powerex, Inc. DIODE GEN PURP 1.2KV 220A DO205 Anfrage
R6035KNZ1C9 Image R6035KNZ1C9 LAPIS Semiconductor MOSFET N-CHANNEL 600V 35A TO247 Anfrage
R6046FNZC8 Image R6046FNZC8 LAPIS Semiconductor MOSFET N-CH 600V 46A TO-3PF Anfrage
R6030MNX Image R6030MNX LAPIS Semiconductor MOSFET N-CH 600V 30A TO220FM Anfrage
R60400-1STRM Bussmann (Eaton) FUSE BLOK CART 600V 400A CHASSIS Anfrage
R60400-1CR Bussmann (Eaton) FUSE BLOK CART 600V 400A CHASSIS Anfrage
R6031425HSYA Powerex, Inc. DIODE GEN PURP 1.4KV 250A DO205 Anfrage
R6031022PSYA Powerex, Inc. DIODE GEN PURP 1KV 220A DO205 Anfrage
R6035KNZC8 Image R6035KNZC8 LAPIS Semiconductor MOSFET N-CHANNEL 600V 35A TO3PF Anfrage
R60400-3CR Bussmann (Eaton) FUSE BLOK CART 600V 400A CHASSIS Anfrage
R6046ANZ1C9 Image R6046ANZ1C9 LAPIS Semiconductor MOSFET N-CH 600V 46A TO247 Anfrage
R6031435ESYA Powerex, Inc. DIODE GEN PURP 1.4KV 350A DO205 Anfrage
R6035ENZ1C9 Image R6035ENZ1C9 LAPIS Semiconductor MOSFET N-CH 600V 35A TO247 Anfrage

läst Nachrichten