R6076ENZ1C9
R6076ENZ1C9
Nomor bagian:
R6076ENZ1C9
Pabrikan:
LAPIS Semiconductor
Deskripsi:
MOSFET N-CH 600V 76A TO247
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
68869 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
R6076ENZ1C9.pdf

pengantar

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Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-247
Seri:-
Rds Pada (Max) @ Id, Vgs:42 mOhm @ 44.4A, 10V
Power Disipasi (Max):120W (Tc)
Pengemasan:Tube
Paket / Case:TO-247-3
Suhu Operasional:150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:6500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):600V
Detil Deskripsi:N-Channel 600V 76A (Tc) 120W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25 ° C:76A (Tc)
Email:[email protected]

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