Deutsch
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
Über uns | Kontakt | Angebot anfordern |
Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > R6007ENX
R6007ENX
R6007ENX
Artikelnummer:
R6007ENX
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 600V 7A TO220
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
74480 Pieces
Lieferzeit:
1-2 days
Datenblatt:
R6007ENX.pdf
Anfrage

Einführung

We can supply R6007ENX, use the request quote form to request R6007ENX pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number R6007ENX.The price and lead time for R6007ENX depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# R6007ENX.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220FM
Serie:-
Rds On (Max) @ Id, Vgs:620 mOhm @ 2.4A, 10V
Verlustleistung (max):40W (Tc)
Verpackung:Bulk
Verpackung / Gehäuse:TO-220-3 Full Pack
Andere Namen:R6007ENXCT
R6007ENXCT-ND
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:17 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:390pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 7A (Tc) 40W (Tc) Through Hole TO-220FM
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung

In Verbindung stehende Teile für R6007ENX

Image Artikelnummer Hersteller Beschreibung Aussicht
R6004KNX Image R6004KNX LAPIS Semiconductor MOSFET N-CH 600V 4A TO220FM Anfrage
R6008ANX Image R6008ANX LAPIS Semiconductor MOSFET N-CH 600V 8A TO-220FM Anfrage
R6009KNJTL Image R6009KNJTL LAPIS Semiconductor MOSFET N-CHANNEL 600V 9A TO263 Anfrage
R6008FNX Image R6008FNX LAPIS Semiconductor MOSFET N-CH 600V 8A TO-220FM Anfrage
R60060-3COR Bussmann (Eaton) FUSE BLOCK CART 600V 60A CHASSIS Anfrage
R60060-2CR Bussmann (Eaton) FUSE BLOCK CART 600V 60A CHASSIS Anfrage
R6009ENJTL Image R6009ENJTL LAPIS Semiconductor MOSFET N-CH 600V 9A LPT Anfrage
R6009KNX Image R6009KNX LAPIS Semiconductor MOSFET N-CH 600V 9A TO220FM Anfrage
R6007ENJTL Image R6007ENJTL LAPIS Semiconductor MOSFET N-CH 600V 7A LPT Anfrage
R6007KNJTL Image R6007KNJTL LAPIS Semiconductor MOSFET N-CHANNEL 600V 7A TO263 Anfrage
R60100-1COR Bussmann (Eaton) FUSE BLOK CART 600V 100A CHASSIS Anfrage
R6009ENX Image R6009ENX LAPIS Semiconductor MOSFET N-CH 600V 9A TO220 Anfrage
R60060-2COR Bussmann (Eaton) FUSE BLOCK CART 600V 60A CHASSIS Anfrage
R6007KNX Image R6007KNX LAPIS Semiconductor MOSFET N-CH 600V 7A TO220FM Anfrage
R6008FNJTL Image R6008FNJTL LAPIS Semiconductor MOSFET N-CH 600V 8A LPTS Anfrage
R60060-1CR Bussmann (Eaton) FUSE BLOCK CART 600V 60A CHASSIS Anfrage
R6006ANX Image R6006ANX LAPIS Semiconductor MOSFET N-CH 600V 6A TO-220FM Anfrage
R60060-1COR Bussmann (Eaton) FUSE BLOCK CART 600V 60A CHASSIS Anfrage
R6006ANDTL Image R6006ANDTL LAPIS Semiconductor MOSFET N-CH 600V 6A CPT Anfrage
R60060-3CR Bussmann (Eaton) FUSE BLOCK CART 600V 60A CHASSIS Anfrage

läst Nachrichten