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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > R6009ENJTL
R6009ENJTL
R6009ENJTL
Artikelnummer:
R6009ENJTL
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET N-CH 600V 9A LPT
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30609 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.R6009ENJTL.pdf2.R6009ENJTL.pdf
Anfrage

Einführung

We can supply R6009ENJTL, use the request quote form to request R6009ENJTL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number R6009ENJTL.The price and lead time for R6009ENJTL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# R6009ENJTL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:LPTS (D2PAK)
Serie:-
Rds On (Max) @ Id, Vgs:535 mOhm @ 2.8A, 10V
Verlustleistung (max):40W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:R6009ENJTLCT
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:17 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9A (Tc)
Email:[email protected]

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