NTMD4884NFR2G
Artikelnummer:
NTMD4884NFR2G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 3.3A 8-SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
11843 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTMD4884NFR2G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOIC
Serie:-
Rds On (Max) @ Id, Vgs:48 mOhm @ 4A, 10V
Verlustleistung (max):770mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:360pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:4.2nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:Schottky Diode (Isolated)
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 3.3A (Ta) 770mW (Ta) Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.3A (Ta)
Email:[email protected]

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