NTMD6N04R2G
Artikelnummer:
NTMD6N04R2G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 40V 4.6A 8SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
49555 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTMD6N04R2G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:8-SOIC
Serie:-
Rds On (Max) @ Id, Vgs:34 mOhm @ 5.8A, 10V
Leistung - max:1.29W
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:NTMD6N04R2GOSCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:900pF @ 32V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 40V 4.6A 1.29W Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4.6A
Basisteilenummer:NTMD6N04
Email:[email protected]

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