NTMD2C02R2G
Artikelnummer:
NTMD2C02R2G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N/P-CH 20V 8SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
52507 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTMD2C02R2G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.2V @ 250µA
Supplier Device-Gehäuse:8-SOIC
Serie:-
Rds On (Max) @ Id, Vgs:43 mOhm @ 4A, 4.5V
Leistung - max:2W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:NTMD2C02R2GOS
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array N and P-Channel 20V 5.2A, 3.4A 2W Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5.2A, 3.4A
Email:[email protected]

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