NTJS3151PT2
NTJS3151PT2
Artikelnummer:
NTJS3151PT2
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET P-CH 12V 2.7A SOT-363
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
62712 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTJS3151PT2.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:400mV @ 100µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Rds On (Max) @ Id, Vgs:60 mOhm @ 3.3A, 4.5V
Verlustleistung (max):625mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:850pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:8.6nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):12V
detaillierte Beschreibung:P-Channel 12V 2.7A (Ta) 625mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.7A (Ta)
Email:[email protected]

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