NTJD4158CT1G
NTJD4158CT1G
Artikelnummer:
NTJD4158CT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N/P-CH 30V/20V SOT-363
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
59695 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTJD4158CT1G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 100µA
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 10mA, 4.5V
Leistung - max:270mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:NTJD4158CT1G-ND
NTJD4158CT1GOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:50 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:33pF @ 5V
Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 5V
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V, 20V
detaillierte Beschreibung:Mosfet Array N and P-Channel 30V, 20V 250mA, 880mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:250mA, 880mA
Basisteilenummer:NTJD4158C
Email:[email protected]

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