NTJD4152PT1
NTJD4152PT1
Artikelnummer:
NTJD4152PT1
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2P-CH 20V 0.88A SOT-363
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
61559 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTJD4152PT1.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.2V @ 250µA
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Rds On (Max) @ Id, Vgs:260 mOhm @ 880mA, 4.5V
Leistung - max:272mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 4.5V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:880mA
Basisteilenummer:NTJD4152P
Email:[email protected]

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