NTJS3157NT1G
NTJS3157NT1G
Artikelnummer:
NTJS3157NT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 20V 3.2A SOT-363
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
75397 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTJS3157NT1G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Rds On (Max) @ Id, Vgs:60 mOhm @ 4A, 4.5V
Verlustleistung (max):1W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:NTJS3157NT1G-ND
NTJS3157NT1GOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:29 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:N-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3.2A (Ta)
Email:[email protected]

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