NTJD2152PT1G
NTJD2152PT1G
Artikelnummer:
NTJD2152PT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2P-CH 8V 0.775A SOT-363
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
50308 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTJD2152PT1G.pdf

Einführung

We can supply NTJD2152PT1G, use the request quote form to request NTJD2152PT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTJD2152PT1G.The price and lead time for NTJD2152PT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTJD2152PT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:SC-88/SC70-6/SOT-363
Serie:-
Rds On (Max) @ Id, Vgs:300 mOhm @ 570mA, 4.5V
Leistung - max:270mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-TSSOP, SC-88, SOT-363
Andere Namen:NTJD2152PT1GOS
NTJD2152PT1GOS-ND
NTJD2152PT1GOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:225pF @ 8V
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):8V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 8V 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:775mA
Basisteilenummer:NTJD2152P
Email:[email protected]

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