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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFH60N65X2-4
IXFH60N65X2-4
Artikelnummer:
IXFH60N65X2-4
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH
verfügbare Anzahl:
18006 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFH60N65X2-4.pdf
Anfrage

Einführung

We can supply IXFH60N65X2-4, use the request quote form to request IXFH60N65X2-4 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFH60N65X2-4.The price and lead time for IXFH60N65X2-4 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFH60N65X2-4.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 4mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247-4L
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:52 mOhm @ 30A, 10V
Verlustleistung (max):780W (Tc)
Verpackung / Gehäuse:TO-247-4
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Hersteller Standard Vorlaufzeit:24 Weeks
Eingabekapazität (Ciss) (Max) @ Vds:6300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:108nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247-4L
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:60A (Tc)
Email:[email protected]

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