FDC6561AN
FDC6561AN
Artikelnummer:
FDC6561AN
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 30V 2.5A SSOT6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
15690 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDC6561AN.pdf

Einführung

We can supply FDC6561AN, use the request quote form to request FDC6561AN pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDC6561AN.The price and lead time for FDC6561AN depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDC6561AN.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:SuperSOT™-6
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:95 mOhm @ 2.5A, 10V
Leistung - max:700mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:SOT-23-6 Thin, TSOT-23-6
Andere Namen:FDC6561ANCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:42 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 2.5A 700mW Surface Mount SuperSOT™-6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.5A
Email:[email protected]

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