FDC645N_F095
FDC645N_F095
Artikelnummer:
FDC645N_F095
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 5.5A 6-SSOT
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
75122 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDC645N_F095.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SuperSOT™-6
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:26 mOhm @ 6.2A, 10V
Verlustleistung (max):1.6W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SOT-23-6 Thin, TSOT-23-6
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:21nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5.5A (Ta)
Email:[email protected]

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