FDC697P_F077
Artikelnummer:
FDC697P_F077
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET P-CH 20V 8A SSOT-6
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
36020 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDC697P_F077.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SuperSOT™-6 FLMP
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:20 mOhm @ 8A, 4.5V
Verlustleistung (max):2W (Ta)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:6-SSOT Flat-lead, SuperSOT™-6 FLMP
Andere Namen:FDC697P_NLCT
FDC697P_NLCT-ND
FDC697PCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3524pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:55nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 8A (Ta) 2W (Ta) Surface Mount SuperSOT™-6 FLMP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8A (Ta)
Email:[email protected]

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